MS652S
RF TRANS NPN 16V 512MHZ M123Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's MS652S is a high-power NPN bipolar RF transistor designed for demanding applications. This component operates within the 450MHz to 512MHz frequency range, offering a robust 25W power output. Key specifications include a collector current of 2A and a collector-emitter breakdown voltage of 16V. The MS652S exhibits a minimum DC current gain (hFE) of 10 at 200mA and 5V, coupled with a typical gain of 10dB. Engineered for reliable performance, it features a high operating junction temperature of 200°C. The M123 chassis mount package facilitates efficient thermal management in power-sensitive systems. This transistor is suitable for use in broadcast transmitters, radar systems, and other high-frequency power amplification applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | M123 |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 10dB |
| Power - Max | 25W |
| Current - Collector (Ic) (Max) | 2A |
| Voltage - Collector Emitter Breakdown (Max) | 16V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 200mA, 5V |
| Frequency - Transition | 450MHz ~ 512MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | M123 |
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