MS2554A
RF TRANS NPN 65V 1.15GHZ M216Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation MS2554A is an NPN bipolar RF transistor designed for high-power applications. Featuring a collector current capability of 17.8A and a maximum collector-emitter breakdown voltage of 65V, this component operates efficiently across a frequency range of 1.025GHz to 1.15GHz. The device offers a typical gain of 6.2dB and a minimum DC current gain (hFE) of 15 at 1A, 5V. With a maximum power dissipation of 600W, it is suitable for demanding applications. The MS2554A is supplied in an M216 package for chassis mounting, facilitating robust thermal management. Its construction and performance characteristics make it a reliable choice for high-frequency power amplification in telecommunications infrastructure, radar systems, and industrial RF heating equipment. The component is available in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | M216 |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C |
| Gain | 6.2dB |
| Power - Max | 600W |
| Current - Collector (Ic) (Max) | 17.8A |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 1A, 5V |
| Frequency - Transition | 1.025GHz ~ 1.15GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | M216 |
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