MS2553C
RF TRANS NPN 25V 1.15GHZ M220Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's MS2553C is an NPN RF power transistor designed for high-power applications. This component operates within a frequency range of 1.025GHz to 1.15GHz, delivering a typical gain of 10.5dB. It features a maximum collector current (Ic) of 4A and a collector emitter breakdown voltage of 25V. The device is rated for a maximum power output of 175W and has a minimum DC current gain (hFE) of 20 at 500mA and 5V.
The MS2553C is supplied in a M220 chassis mount package, facilitating efficient thermal management. Its robust construction and operating temperature capability of up to 200°C (TJ) make it suitable for demanding environments. This transistor finds application in high-power RF amplification, telecommunications infrastructure, and radar systems. The component is provided in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | M220 |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 10.5dB |
| Power - Max | 175W |
| Current - Collector (Ic) (Max) | 4A |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 500mA, 5V |
| Frequency - Transition | 1.025GHz ~ 1.15GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | M220 |
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