MS2473
RF TRANS NPN 65V 1.09GHZ M112Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation MS2473 is an NPN RF power transistor designed for high-power applications. This chassis-mount device operates at a frequency of 1.09GHz with a typical gain of 6dB. It features a high collector current capability of 46A and a collector-emitter breakdown voltage of 65V. The transistor boasts a maximum power dissipation of 2300W and a junction temperature rating of 200°C, making it suitable for demanding operating environments. The M112 package facilitates efficient thermal management. This component is utilized in applications such as radar systems and high-power RF amplification.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | M112 |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 6dB |
| Power - Max | 2300W |
| Current - Collector (Ic) (Max) | 46A |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 5 @ 1A, 5V |
| Frequency - Transition | 1.09GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | M112 |
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