MS2472
RF TRANS NPN 65V 1.15GHZ M112Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation MS2472 is an NPN RF power transistor designed for high-power applications. This component operates within a frequency range of 1.025GHz to 1.15GHz, delivering a typical gain of 5.6dB. It features a maximum collector current of 40A and a collector-emitter breakdown voltage of 65V. The transistor is rated for a maximum power output of 1350W and has a minimum DC current gain (hFE) of 5 at 250mA and 5V. Engineered for robust performance, the MS2472 is presented in a chassis mount package (M112), suitable for demanding thermal environments with an operating junction temperature up to 200°C. This device is commonly utilized in robust RF power amplification systems across various high-frequency communication and radar applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | M112 |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 5.6dB |
| Power - Max | 1350W |
| Current - Collector (Ic) (Max) | 40A |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 5 @ 250mA, 5V |
| Frequency - Transition | 1.025GHz ~ 1.15GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | M112 |
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