MS2361
RF TRANS NPN 65V 1.15GHZ M115Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation presents the MS2361, an NPN bipolar RF transistor designed for high-power applications. This component operates within a frequency range of 1.025GHz to 1.15GHz, offering a typical gain of 9dB. With a maximum collector current of 2.6A and a collector-emitter breakdown voltage of 65V, the MS2361 is engineered for demanding RF power amplification tasks. Its robust design supports a maximum power output of 87.5W and an operating junction temperature up to 200°C. The M115 chassis mount package ensures effective thermal management, making it suitable for use in industrial, defense, and telecommunications sectors where reliable performance under strenuous conditions is paramount.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | M115 |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 9dB |
| Power - Max | 87.5W |
| Current - Collector (Ic) (Max) | 2.6A |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | 1.025GHz ~ 1.15GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | M115 |
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