MS2272
RF TRANS NPN 65V 1.215GHZ M216Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's MS2272 is an NPN RF Power Transistor designed for high-power applications. This chassis-mount device operates within the 960MHz to 1.215GHz frequency range, offering a maximum collector current of 24A and a collector-emitter breakdown voltage of 65V. With a peak output power of 940W and a gain of 7.6dB, the MS2272 is suitable for demanding RF power amplification stages. The minimum DC current gain (hFE) is 10 at 5A and 5V. Its robust M216 package and a maximum operating junction temperature of 200°C make it a reliable component for industrial, defense, and telecommunications systems requiring significant RF power handling.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | M216 |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 7.6dB |
| Power - Max | 940W |
| Current - Collector (Ic) (Max) | 24A |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 5A, 5V |
| Frequency - Transition | 960MHz ~ 1.215GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | M216 |
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