MS2267
RF TRANS NPN 60V 1.215GHZ M214Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's MS2267 is an NPN RF power transistor designed for high-power applications. This chassis-mount device operates within the 960 MHz to 1.215 GHz frequency range, delivering up to 575W of power. Key specifications include a collector current (Ic) of 20A, a collector-emitter breakdown voltage (Vce) of 60V, and a minimum DC current gain (hFE) of 10 at 1A and 5V. The transistor exhibits a power gain of 8dB to 8.7dB. Its robust construction and operating temperature up to 250°C (TJ) make it suitable for demanding environments in industries such as radar, telecommunications, and industrial heating. The M214 package facilitates efficient thermal management.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | M214 |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 250°C (TJ) |
| Gain | 8dB ~ 8.7dB |
| Power - Max | 575W |
| Current - Collector (Ic) (Max) | 20A |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 1A, 5V |
| Frequency - Transition | 960MHz ~ 1.215GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | M214 |
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