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MS2215

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MS2215

RF TRANS NPN 55V 1.215GHZ M216

Manufacturer: Microsemi Corporation

Categories: Bipolar RF Transistors

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Microsemi Corporation MS2215 is an NPN bipolar RF transistor designed for high-power applications. This device offers a collector current capability of up to 16.5A and a collector-emitter breakdown voltage of 55V. Operating across a frequency range of 960MHz to 1.215GHz, the MS2215 delivers a nominal power output of 300W with a gain of 7.5dB. Its robust design features a minimum DC current gain of 20 at 5A, 5V. The M216 chassis mount package facilitates efficient thermal management, supporting an operating junction temperature of 250°C. This component is suitable for demanding RF power amplification stages in telecommunications infrastructure, radar systems, and industrial RF heating applications.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseM216
Mounting TypeChassis Mount
Transistor TypeNPN
Operating Temperature250°C (TJ)
Gain7.5dB
Power - Max300W
Current - Collector (Ic) (Max)16.5A
Voltage - Collector Emitter Breakdown (Max)55V
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 5A, 5V
Frequency - Transition960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f)-
Supplier Device PackageM216

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