MS2215
RF TRANS NPN 55V 1.215GHZ M216Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation MS2215 is an NPN bipolar RF transistor designed for high-power applications. This device offers a collector current capability of up to 16.5A and a collector-emitter breakdown voltage of 55V. Operating across a frequency range of 960MHz to 1.215GHz, the MS2215 delivers a nominal power output of 300W with a gain of 7.5dB. Its robust design features a minimum DC current gain of 20 at 5A, 5V. The M216 chassis mount package facilitates efficient thermal management, supporting an operating junction temperature of 250°C. This component is suitable for demanding RF power amplification stages in telecommunications infrastructure, radar systems, and industrial RF heating applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | M216 |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 250°C (TJ) |
| Gain | 7.5dB |
| Power - Max | 300W |
| Current - Collector (Ic) (Max) | 16.5A |
| Voltage - Collector Emitter Breakdown (Max) | 55V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5A, 5V |
| Frequency - Transition | 960MHz ~ 1.215GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | M216 |
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