MS2212
RF TRANS NPN 55V 1.215GHZ M222Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation MS2212 is an NPN bipolar RF transistor designed for high-power applications. This component operates within a frequency range of 960MHz to 1.215GHz, offering a typical gain of 8.1dB to 8.9dB. It features a maximum collector current (Ic) of 1.8A and a collector emitter breakdown voltage of 55V. The MS2212 is rated for a maximum power output of 50W and has a minimum DC current gain (hFE) of 15 at 500mA and 5V. Engineered for robust performance, it supports a junction temperature up to 250°C. The transistor utilizes a chassis mount configuration with the M222 package, suitable for demanding thermal management. This component finds application in radar systems, communication infrastructure, and other high-frequency power amplification stages.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | M222 |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 250°C (TJ) |
| Gain | 8.1dB ~ 8.9dB |
| Power - Max | 50W |
| Current - Collector (Ic) (Max) | 1.8A |
| Voltage - Collector Emitter Breakdown (Max) | 55V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 500mA, 5V |
| Frequency - Transition | 960MHz ~ 1.215GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | M222 |
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