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MS2212

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MS2212

RF TRANS NPN 55V 1.215GHZ M222

Manufacturer: Microsemi Corporation

Categories: Bipolar RF Transistors

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Microsemi Corporation MS2212 is an NPN bipolar RF transistor designed for high-power applications. This component operates within a frequency range of 960MHz to 1.215GHz, offering a typical gain of 8.1dB to 8.9dB. It features a maximum collector current (Ic) of 1.8A and a collector emitter breakdown voltage of 55V. The MS2212 is rated for a maximum power output of 50W and has a minimum DC current gain (hFE) of 15 at 500mA and 5V. Engineered for robust performance, it supports a junction temperature up to 250°C. The transistor utilizes a chassis mount configuration with the M222 package, suitable for demanding thermal management. This component finds application in radar systems, communication infrastructure, and other high-frequency power amplification stages.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseM222
Mounting TypeChassis Mount
Transistor TypeNPN
Operating Temperature250°C (TJ)
Gain8.1dB ~ 8.9dB
Power - Max50W
Current - Collector (Ic) (Max)1.8A
Voltage - Collector Emitter Breakdown (Max)55V
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 500mA, 5V
Frequency - Transition960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f)-
Supplier Device PackageM222

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