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MS2211

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MS2211

RF TRANS NPN 48V 1.215GHZ M222

Manufacturer: Microsemi Corporation

Categories: Bipolar RF Transistors

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Microsemi Corporation MS2211 NPN RF Transistor. This chassis-mount device operates within a frequency range of 960MHz to 1.215GHz, featuring a collector current capability of 900mA and a maximum collector emitter breakdown voltage of 48V. The MS2211 offers a power output of 25W and a typical gain of 9.3dB. Its minimum DC current gain (hFE) is rated at 30 at 250mA, 5V. This component is suitable for applications in the telecommunications and defense industries. The device is supplied in bulk packaging.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseM222
Mounting TypeChassis Mount
Transistor TypeNPN
Operating Temperature250°C (TJ)
Gain9.3dB
Power - Max25W
Current - Collector (Ic) (Max)900mA
Voltage - Collector Emitter Breakdown (Max)48V
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 250mA, 5V
Frequency - Transition960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f)-
Supplier Device PackageM222

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