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MS2210

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MS2210

RF TRANS NPN 65V 1.215GHZ M216

Manufacturer: Microsemi Corporation

Categories: Bipolar RF Transistors

Quality Control: Learn More

Microsemi Corporation MS2210 is an NPN RF Power Transistor designed for demanding applications. This chassis mount device operates across a frequency range of 960MHz to 1.215GHz, delivering a substantial 940W of power. Key specifications include a collector current capability of 24A and a collector-emitter breakdown voltage of 65V. The MS2210 exhibits a minimum DC current gain (hFE) of 10 at 5A, 5V, and a typical gain of 7dB. Its robust construction and operating temperature up to 200°C (TJ) make it suitable for applications in radar systems, high-power amplifiers, and telecommunications infrastructure. The component is supplied in Bulk packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseM216
Mounting TypeChassis Mount
Transistor TypeNPN
Operating Temperature200°C (TJ)
Gain7dB
Power - Max940W
Current - Collector (Ic) (Max)24A
Voltage - Collector Emitter Breakdown (Max)65V
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 5A, 5V
Frequency - Transition960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f)-
Supplier Device PackageM216

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