MS2210
RF TRANS NPN 65V 1.215GHZ M216Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation MS2210 is an NPN RF Power Transistor designed for demanding applications. This chassis mount device operates across a frequency range of 960MHz to 1.215GHz, delivering a substantial 940W of power. Key specifications include a collector current capability of 24A and a collector-emitter breakdown voltage of 65V. The MS2210 exhibits a minimum DC current gain (hFE) of 10 at 5A, 5V, and a typical gain of 7dB. Its robust construction and operating temperature up to 200°C (TJ) make it suitable for applications in radar systems, high-power amplifiers, and telecommunications infrastructure. The component is supplied in Bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | M216 |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 7dB |
| Power - Max | 940W |
| Current - Collector (Ic) (Max) | 24A |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 5A, 5V |
| Frequency - Transition | 960MHz ~ 1.215GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | M216 |
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