MS2209
RF TRANS NPN 65V 225MHZ M218Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation MS2209, an NPN bipolar RF transistor, delivers robust performance for high-power RF applications. This component features a 65V collector-emitter breakdown voltage and a maximum collector current of 7A, with a minimum DC current gain (hFE) of 20 at 2A, 5V. Operating up to 225MHz, the MS2209 offers a typical gain of 8.4dB and a maximum power dissipation of 220W. Designed for chassis mounting within the M218 package, this device is suitable for demanding environments with an operating temperature up to 200°C (TJ). Its specifications make it a reliable choice for applications in industrial RF power generation and communication systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | M218 |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 8.4dB |
| Power - Max | 220W |
| Current - Collector (Ic) (Max) | 7A |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 2A, 5V |
| Frequency - Transition | 225MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | M218 |
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