MS2207
RF TRANS NPN 65V 1.09GHZ M216Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation MS2207 is an NPN bipolar RF transistor designed for high-power applications. This chassis mount device operates with a collector-emitter breakdown voltage of 65V and a maximum collector current of 24A. It features a transition frequency of 1.09GHz and a typical gain of 8dB. The MS2207 is rated for a maximum power output of 880W and can operate at junction temperatures up to 250°C. With a minimum DC current gain of 10 at 5A and 5V, this component is suitable for demanding RF power amplification in industrial, defense, and broadcast applications. The component is supplied in Bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | M216 |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 250°C (TJ) |
| Gain | 8dB |
| Power - Max | 880W |
| Current - Collector (Ic) (Max) | 24A |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 5A, 5V |
| Frequency - Transition | 1.09GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | M216 |
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