MS2204
RF TRANS NPN 20V 1.09GHZ M115Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
Quality Control: Learn More
Microsemi Corporation NPN RF Transistor, part number MS2204. This device offers a 20V collector-emitter breakdown voltage and a 1.09GHz transition frequency. Key electrical specifications include a maximum collector current of 300mA and a minimum DC current gain (hFE) of 15 at 100mA and 5V. The transistor delivers a typical gain of 10.8dB and a maximum power dissipation of 600mW. Designed for chassis mounting, the MS2204 is supplied in the M115 package. This component finds application in various RF power amplification stages across wireless communications and radar systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | M115 |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 10.8dB |
| Power - Max | 600mW |
| Current - Collector (Ic) (Max) | 300mA |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 100mA, 5V |
| Frequency - Transition | 1.09GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | M115 |
Request a Quote
Clients Also Buy
SD1332-05C
RF TRANS NPN 15V 5.5GHZ M150
2003
RF TRANS NPN 50V 2GHZ 55BT-1
MS1337
RF TRANS NPN 18V 175MHZ M113
