MS2203
RF TRANS NPN 20V 1.09GHZ M220Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's MS2203 is an NPN bipolar RF transistor designed for high-frequency applications. This chassis-mount component offers a 20V collector-emitter breakdown voltage and a maximum collector current of 300mA. With a transition frequency of 1.09GHz and a power output of 5W, the MS2203 exhibits a typical gain range of 10.8dB to 12.3dB. It features a minimum DC current gain (hFE) of 120 at 100mA and 5V. The operating junction temperature is rated up to 200°C. This device is suitable for use in demanding RF power amplification and switching applications across various industrial sectors. The MS2203 is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | M220 |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 10.8dB ~ 12.3dB |
| Power - Max | 5W |
| Current - Collector (Ic) (Max) | 300mA |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 5V |
| Frequency - Transition | 1.09GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | M220 |
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