MS2202
RF TRANS NPN 3.5V 1.15GHZ M115Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's MS2202 is an NPN bipolar RF transistor designed for high-power applications. This component operates within a frequency range of 1.025GHz to 1.15GHz, delivering a typical gain of 9dB. It features a maximum collector current of 250mA and a collector-emitter breakdown voltage of 3.5V. The MS2202 offers a minimum DC current gain (hFE) of 30 at 100mA and 5V. With a maximum power dissipation of 10W, it is suitable for demanding environments, supporting an operating junction temperature of up to 200°C. The device utilizes a chassis mount M115 package, facilitating robust thermal management. This RF transistor finds application in various communication and radar systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | M115 |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 9dB |
| Power - Max | 10W |
| Current - Collector (Ic) (Max) | 250mA |
| Voltage - Collector Emitter Breakdown (Max) | 3.5V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 100mA, 5V |
| Frequency - Transition | 1.025GHz ~ 1.15GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | M115 |
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