MS2201
RF TRANS NPN 45V 1.15GHZ M220Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation MS2201 NPN RF Transistor. This component operates within the 1.025GHz to 1.15GHz frequency range, offering a minimum gain of 9dB. It is designed for high-power applications, delivering up to 10W. The transistor features a collector current (Ic) maximum of 250mA and a collector-emitter breakdown voltage of 45V. The minimum DC current gain (hFE) is specified at 0.95 at 10mA and 5V. The MS2201 is housed in an M220 chassis mount package, suitable for demanding thermal environments with an operating temperature of 200°C (TJ). This device is commonly utilized in high-frequency power amplification stages across aerospace, defense, and telecommunications sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | M220 |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 9dB |
| Power - Max | 10W |
| Current - Collector (Ic) (Max) | 250mA |
| Voltage - Collector Emitter Breakdown (Max) | 45V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 0.95 @ 10mA, 5V |
| Frequency - Transition | 1.025GHz ~ 1.15GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | M220 |
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