MS2200
RF TRANS NPN 65V 500MHZ M102Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation MS2200 is an NPN bipolar RF transistor designed for high-power applications within the 400MHz to 500MHz frequency range. Featuring a robust 65V collector-emitter breakdown voltage and a maximum collector current of 43.2A, this device delivers a substantial 1167W of power. The MS2200 exhibits a minimum DC current gain (hFE) of 20 at 5A, 5V, and achieves a gain of 9.7dB. Its M102 package with chassis mount facilitates efficient thermal management, critical for operation at its specified 200°C junction temperature. This component is widely utilized in demanding applications such as radar systems, broadcast transmitters, and industrial RF power amplification.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | M102 |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 9.7dB |
| Power - Max | 1167W |
| Current - Collector (Ic) (Max) | 43.2A |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5A, 5V |
| Frequency - Transition | 400MHz ~ 500MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | M102 |
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