MS1512
RF TRANS NPN 25V 860MHZ M122Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
Quality Control: Learn More
Microsemi Corporation NPN RF Transistor, part number MS1512. This component operates at a frequency transition of 860MHz with a 10dB gain. It features a 25V collector-emitter breakdown voltage and a maximum collector current of 1.2A. The MS1512 is rated for 19.4W of maximum power dissipation and has an operating temperature of up to 200°C (TJ). Designed for robust performance, it utilizes a chassis, stud mount configuration within the M122 package. This device is commonly found in applications requiring high-frequency power amplification within the telecommunications and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | M122 |
| Mounting Type | Chassis, Stud Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 10dB |
| Power - Max | 19.4W |
| Current - Collector (Ic) (Max) | 1.2A |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | 860MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | M122 |
Request a Quote
Clients Also Buy
SD1332-05C
RF TRANS NPN 15V 5.5GHZ M150
2003
RF TRANS NPN 50V 2GHZ 55BT-1
JANTXV2N2857UB
RF TRANS NPN 15V 0.04A UB