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MS1406

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MS1406

RF TRANS NPN 35V 175MHZ M135

Manufacturer: Microsemi Corporation

Categories: Bipolar RF Transistors

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Microsemi Corporation MS1406 is an NPN bipolar RF transistor designed for high-power applications. This component operates at up to 175MHz with a collector current of 3A and a breakdown voltage of 35V. It delivers 30W of power and features a typical gain of 8.2dB. The MS1406 is housed in an M135 stud mount package, suitable for chassis mounting and ensuring efficient thermal management. With an operating temperature of up to 200°C (TJ), it is engineered for demanding environments. This RF transistor finds application in industrial and defense sectors requiring robust RF power amplification.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseM135
Mounting TypeChassis, Stud Mount
Transistor TypeNPN
Operating Temperature200°C (TJ)
Gain8.2dB
Power - Max30W
Current - Collector (Ic) (Max)3A
Voltage - Collector Emitter Breakdown (Max)35V
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 200mA, 5V
Frequency - Transition175MHz
Noise Figure (dB Typ @ f)-
Supplier Device PackageM135

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