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MS1337

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MS1337

RF TRANS NPN 18V 175MHZ M113

Manufacturer: Microsemi Corporation

Categories: Bipolar RF Transistors

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Microsemi Corporation MS1337 is an NPN bipolar RF transistor. This component is designed for high-power RF applications, featuring an 18V collector-emitter breakdown voltage and a 70W maximum power dissipation. With a collector current capability of 8A and a transition frequency of 175MHz, the MS1337 offers a typical gain of 10dB. It is supplied in an M113 chassis mount package, suitable for demanding thermal environments with an operating junction temperature up to 200°C. The device exhibits a minimum DC current gain (hFE) of 20 at 250mA and 5V. This transistor is utilized in various industrial and communication systems requiring robust RF power amplification.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseM113
Mounting TypeChassis Mount
Transistor TypeNPN
Operating Temperature200°C (TJ)
Gain10dB
Power - Max70W
Current - Collector (Ic) (Max)8A
Voltage - Collector Emitter Breakdown (Max)18V
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 250mA, 5V
Frequency - Transition175MHz
Noise Figure (dB Typ @ f)-
Supplier Device PackageM113

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