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MS1336

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MS1336

RF TRANS NPN 18V 175MHZ M135

Manufacturer: Microsemi Corporation

Categories: Bipolar RF Transistors

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Microsemi Corporation MS1336 is an NPN bipolar RF power transistor designed for demanding applications. This robust component offers a collector-emitter breakdown voltage of 18V and a maximum collector current of 8A. With a transition frequency of 175MHz and a power dissipation capability of 70W, it is engineered for high-power RF amplification. The device features a typical DC current gain (hFE) of 20 at 250mA and 5V, and a gain of 10dB. Its chassis, stud mount configuration in the M135 package ensures efficient thermal management. The MS1336 is suitable for use in broadcast transmitters and industrial RF heating systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseM135
Mounting TypeChassis, Stud Mount
Transistor TypeNPN
Operating Temperature200°C (TJ)
Gain10dB
Power - Max70W
Current - Collector (Ic) (Max)8A
Voltage - Collector Emitter Breakdown (Max)18V
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 250mA, 5V
Frequency - Transition175MHz
Noise Figure (dB Typ @ f)-
Supplier Device PackageM135

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