MS1261
RF TRANS NPN 18V 175MHZ M122Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation MS1261 is an NPN bipolar RF transistor designed for demanding applications. This component features a 18V collector-emitter breakdown voltage and a maximum collector current of 2.5A. With a transition frequency of 175MHz, it delivers a typical gain of 12dB, making it suitable for RF power amplification stages. The device offers a robust 34W power dissipation and operates at high junction temperatures up to 200°C. Designed for chassis or stud mounting, the MS1261 is housed in the M122 package, commonly utilized in industrial, defense, and telecommunications equipment requiring reliable RF performance. The minimum DC current gain (hFE) is 20 at 250mA and 5V.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | M122 |
| Mounting Type | Chassis, Stud Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 12dB |
| Power - Max | 34W |
| Current - Collector (Ic) (Max) | 2.5A |
| Voltage - Collector Emitter Breakdown (Max) | 18V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 250mA, 5V |
| Frequency - Transition | 175MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | M122 |
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