MS1227
RF TRANS NPN 18V 30MHZ M113Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's MS1227 is an NPN bipolar RF transistor designed for high-power applications. This chassis-mount device features a collector current capability of 4.5A and a maximum collector-emitter breakdown voltage of 18V. With a transition frequency of 30MHz, the MS1227 delivers a typical gain of 15dB. The minimum DC current gain (hFE) is specified at 200 at 1A and 5V. Operating at a maximum power dissipation of 80W, this transistor is suitable for demanding RF power amplification in industrial and communications equipment. The M113 package facilitates efficient thermal management.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | M113 |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 15dB |
| Power - Max | 80W |
| Current - Collector (Ic) (Max) | 4.5A |
| Voltage - Collector Emitter Breakdown (Max) | 18V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1A, 5V |
| Frequency - Transition | 30MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | M113 |
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