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MS1226

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MS1226

RF TRANS NPN 36V 30MHZ M113

Manufacturer: Microsemi Corporation

Categories: Bipolar RF Transistors

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The Microsemi Corporation MS1226 is an NPN bipolar RF transistor designed for high-power applications. This component features a collector-emitter breakdown voltage of 36V and a maximum collector current of 4.5A. With a transition frequency of 30MHz, it offers a typical gain of 18dB. The MS1226 is rated for a maximum power output of 80W and is supplied in an M113 package for chassis mounting. It operates effectively at junction temperatures up to 200°C. This device is suitable for use in industrial and high-power RF amplifier circuits.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseM113
Mounting TypeChassis Mount
Transistor TypeNPN
Operating Temperature200°C (TJ)
Gain18dB
Power - Max80W
Current - Collector (Ic) (Max)4.5A
Voltage - Collector Emitter Breakdown (Max)36V
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 500mA, 5V
Frequency - Transition30MHz
Noise Figure (dB Typ @ f)-
Supplier Device PackageM113

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