MS1202
RF TRANS NPN 35V 136MHZ M135Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation MS1202 is an NPN bipolar RF transistor designed for high-power applications. This component operates within a frequency range of 118MHz to 136MHz, offering a gain of 8.4dB. It features a maximum collector current (Ic) of 1A and a collector emitter breakdown voltage of 35V. The MS1202 is rated for a maximum power output of 15W and boasts a high junction temperature rating of 200°C. With a minimum DC current gain (hFE) of 5 at 100mA and 5V, this transistor is suitable for demanding RF power amplifier designs. The M135 package facilitates efficient thermal management through chassis mounting. This component is commonly utilized in aerospace and defense applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | M135 |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 8.4dB |
| Power - Max | 15W |
| Current - Collector (Ic) (Max) | 1A |
| Voltage - Collector Emitter Breakdown (Max) | 35V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 5 @ 100mA, 5V |
| Frequency - Transition | 118MHz ~ 136MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | M135 |