MS1076
RF TRANS NPN 35V 30MHZ M174Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation MS1076 is an NPN bipolar RF transistor designed for high-power amplification applications. This chassis-mount component features a 35V collector-emitter breakdown voltage and a maximum collector current of 16A. With a power dissipation capability of 320W and a transition frequency of 30MHz, the MS1076 delivers a typical gain of 12dB at 30MHz, with a minimum DC current gain (hFE) of 15 at 7A and 5V. Its robust design, including a maximum operating junction temperature of 200°C, makes it suitable for demanding applications in industrial, defense, and aerospace sectors. The M174 package ensures efficient thermal management for reliable performance in power-intensive RF systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | M174 |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 12dB |
| Power - Max | 320W |
| Current - Collector (Ic) (Max) | 16A |
| Voltage - Collector Emitter Breakdown (Max) | 35V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 7A, 5V |
| Frequency - Transition | 30MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | M174 |
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