MS1051
RF TRANS NPN 18V 30MHZ M174Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation MS1051 is an NPN bipolar RF transistor designed for high-power applications. This chassis-mount component, packaged in the M174 case, offers a collector current capability of 20A and a maximum collector-emitter breakdown voltage of 18V. With a transition frequency of 30MHz, the MS1051 provides a typical gain range of 11dB to 13dB. It is rated for a maximum power dissipation of 290W and operates at junction temperatures up to 200°C. This component finds utility in robust RF power amplification circuits across various industrial and communications sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | M174 |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 11dB ~ 13dB |
| Power - Max | 290W |
| Current - Collector (Ic) (Max) | 20A |
| Voltage - Collector Emitter Breakdown (Max) | 18V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 5mA, 5V |
| Frequency - Transition | 30MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | M174 |
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