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MS1008

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MS1008

RF TRANS NPN 55V 30MHZ M164

Manufacturer: Microsemi Corporation

Categories: Bipolar RF Transistors

Quality Control: Learn More

Microsemi Corporation's MS1008 is an NPN bipolar RF transistor designed for demanding applications. This component features a 55V collector-emitter breakdown voltage and a 10A collector current capability, with a transition frequency of 30MHz. It delivers a typical gain of 14dB and a power output of 233W. The MS1008 utilizes the M164 chassis mount package, ensuring robust thermal management suitable for high-power operation up to a junction temperature of 200°C. This device finds application in industrial, defense, and aerospace sectors requiring reliable RF power amplification.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 32 week(s)Product Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseM164
Mounting TypeChassis Mount
Transistor TypeNPN
Operating Temperature200°C (TJ)
Gain14dB
Power - Max233W
Current - Collector (Ic) (Max)10A
Voltage - Collector Emitter Breakdown (Max)55V
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 1.4A, 6V
Frequency - Transition30MHz
Noise Figure (dB Typ @ f)-
Supplier Device PackageM164

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