MS1008
RF TRANS NPN 55V 30MHZ M164Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's MS1008 is an NPN bipolar RF transistor designed for demanding applications. This component features a 55V collector-emitter breakdown voltage and a 10A collector current capability, with a transition frequency of 30MHz. It delivers a typical gain of 14dB and a power output of 233W. The MS1008 utilizes the M164 chassis mount package, ensuring robust thermal management suitable for high-power operation up to a junction temperature of 200°C. This device finds application in industrial, defense, and aerospace sectors requiring reliable RF power amplification.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | M164 |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 14dB |
| Power - Max | 233W |
| Current - Collector (Ic) (Max) | 10A |
| Voltage - Collector Emitter Breakdown (Max) | 55V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 1.4A, 6V |
| Frequency - Transition | 30MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | M164 |
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