MS1007
RF TRANS NPN 55V 30MHZ M174Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's MS1007 is an NPN bipolar RF transistor engineered for robust performance in demanding applications. This chassis-mount component operates with a collector-emitter breakdown voltage of 55V and a maximum collector current of 10A. Featuring a transition frequency of 30MHz and a power dissipation capability of 233W, the MS1007 offers a typical gain of 14dB. Its minimum DC current gain (hFE) is rated at 18 at 1.4A and 6V. Designed for high-temperature environments, it can operate up to a junction temperature of 200°C. The M174 package facilitates efficient thermal management. This device is suitable for power amplification in industrial and telecommunications sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | M174 |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 14dB |
| Power - Max | 233W |
| Current - Collector (Ic) (Max) | 10A |
| Voltage - Collector Emitter Breakdown (Max) | 55V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 18 @ 1.4A, 6V |
| Frequency - Transition | 30MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | M174 |
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