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MS1007

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MS1007

RF TRANS NPN 55V 30MHZ M174

Manufacturer: Microsemi Corporation

Categories: Bipolar RF Transistors

Quality Control: Learn More

Microsemi Corporation's MS1007 is an NPN bipolar RF transistor engineered for robust performance in demanding applications. This chassis-mount component operates with a collector-emitter breakdown voltage of 55V and a maximum collector current of 10A. Featuring a transition frequency of 30MHz and a power dissipation capability of 233W, the MS1007 offers a typical gain of 14dB. Its minimum DC current gain (hFE) is rated at 18 at 1.4A and 6V. Designed for high-temperature environments, it can operate up to a junction temperature of 200°C. The M174 package facilitates efficient thermal management. This device is suitable for power amplification in industrial and telecommunications sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 22 week(s)Product Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseM174
Mounting TypeChassis Mount
Transistor TypeNPN
Operating Temperature200°C (TJ)
Gain14dB
Power - Max233W
Current - Collector (Ic) (Max)10A
Voltage - Collector Emitter Breakdown (Max)55V
DC Current Gain (hFE) (Min) @ Ic, Vce18 @ 1.4A, 6V
Frequency - Transition30MHz
Noise Figure (dB Typ @ f)-
Supplier Device PackageM174

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