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MS1006

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MS1006

RF TRANS NPN 55V 30MHZ M135

Manufacturer: Microsemi Corporation

Categories: Bipolar RF Transistors

Quality Control: Learn More

Microsemi Corporation MS1006 is an NPN bipolar RF transistor designed for high-power applications. This component operates with a collector-emitter breakdown voltage of 55V and a maximum collector current of 3.25A. Featuring a transition frequency of 30MHz and a power dissipation capability of 127W, the MS1006 is engineered for robust performance. The device offers a typical gain of 14dB and a minimum DC current gain (hFE) of 19 at 1.4A and 6V. Its stud mount package, designated as M135, ensures efficient thermal management. The MS1006 is suitable for use in demanding RF power amplifier designs across various industrial sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseM135
Mounting TypeStud Mount
Transistor TypeNPN
Operating Temperature200°C
Gain14dB
Power - Max127W
Current - Collector (Ic) (Max)3.25A
Voltage - Collector Emitter Breakdown (Max)55V
DC Current Gain (hFE) (Min) @ Ic, Vce19 @ 1.4A, 6V
Frequency - Transition30MHz
Noise Figure (dB Typ @ f)-
Supplier Device PackageM135

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