MS1006
RF TRANS NPN 55V 30MHZ M135Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation MS1006 is an NPN bipolar RF transistor designed for high-power applications. This component operates with a collector-emitter breakdown voltage of 55V and a maximum collector current of 3.25A. Featuring a transition frequency of 30MHz and a power dissipation capability of 127W, the MS1006 is engineered for robust performance. The device offers a typical gain of 14dB and a minimum DC current gain (hFE) of 19 at 1.4A and 6V. Its stud mount package, designated as M135, ensures efficient thermal management. The MS1006 is suitable for use in demanding RF power amplifier designs across various industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | M135 |
| Mounting Type | Stud Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C |
| Gain | 14dB |
| Power - Max | 127W |
| Current - Collector (Ic) (Max) | 3.25A |
| Voltage - Collector Emitter Breakdown (Max) | 55V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 19 @ 1.4A, 6V |
| Frequency - Transition | 30MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | M135 |
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