MS1004
RF TRANS NPN 55V 30MHZ M177Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation MS1004 is a high-power NPN RF transistor designed for demanding applications. This component features a 55V collector-emitter breakdown voltage and a maximum collector current of 40A, enabling robust performance in power amplification stages. With a transition frequency of 30MHz and a power dissipation capability of 330W, the MS1004 is suitable for use in industrial, defense, and telecommunications systems requiring reliable RF power handling. The M177 chassis mount package ensures efficient thermal management for sustained operation at high temperatures, up to 200°C (TJ). This device offers a minimum DC current gain (hFE) of 15 at 10A, 6V and a typical gain of 14.5dB, facilitating effective signal amplification.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | M177 |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 14.5dB |
| Power - Max | 330W |
| Current - Collector (Ic) (Max) | 40A |
| Voltage - Collector Emitter Breakdown (Max) | 55V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 10A, 6V |
| Frequency - Transition | 30MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | M177 |