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MS1004

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MS1004

RF TRANS NPN 55V 30MHZ M177

Manufacturer: Microsemi Corporation

Categories: Bipolar RF Transistors

Quality Control: Learn More

Microsemi Corporation MS1004 is a high-power NPN RF transistor designed for demanding applications. This component features a 55V collector-emitter breakdown voltage and a maximum collector current of 40A, enabling robust performance in power amplification stages. With a transition frequency of 30MHz and a power dissipation capability of 330W, the MS1004 is suitable for use in industrial, defense, and telecommunications systems requiring reliable RF power handling. The M177 chassis mount package ensures efficient thermal management for sustained operation at high temperatures, up to 200°C (TJ). This device offers a minimum DC current gain (hFE) of 15 at 10A, 6V and a typical gain of 14.5dB, facilitating effective signal amplification.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 32 week(s)Product Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseM177
Mounting TypeChassis Mount
Transistor TypeNPN
Operating Temperature200°C (TJ)
Gain14.5dB
Power - Max330W
Current - Collector (Ic) (Max)40A
Voltage - Collector Emitter Breakdown (Max)55V
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 10A, 6V
Frequency - Transition30MHz
Noise Figure (dB Typ @ f)-
Supplier Device PackageM177

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