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MS1003

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MS1003

RF TRANS NPN 18V 175MHZ M111

Manufacturer: Microsemi Corporation

Categories: Bipolar RF Transistors

Quality Control: Learn More

Microsemi Corporation MS1003 is an NPN bipolar RF transistor designed for high-power applications. This surface mount component, packaged in the M111 case, operates within a frequency range of 136MHz to 175MHz, delivering a typical gain of 6dB. It supports a maximum collector current of 20A and a collector-emitter breakdown voltage of 18V, with a maximum power dissipation of 270W. The minimum DC current gain (hFE) is specified at 10 at 5A, 5V. The MS1003 is suitable for demanding applications in the aerospace, defense, and industrial sectors requiring robust RF performance. It operates efficiently at elevated junction temperatures up to 200°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 48 week(s)Product Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseM111
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature200°C (TJ)
Gain6dB
Power - Max270W
Current - Collector (Ic) (Max)20A
Voltage - Collector Emitter Breakdown (Max)18V
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 5A, 5V
Frequency - Transition136MHz ~ 175MHz
Noise Figure (dB Typ @ f)-
Supplier Device PackageM111

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