MS1003
RF TRANS NPN 18V 175MHZ M111Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation MS1003 is an NPN bipolar RF transistor designed for high-power applications. This surface mount component, packaged in the M111 case, operates within a frequency range of 136MHz to 175MHz, delivering a typical gain of 6dB. It supports a maximum collector current of 20A and a collector-emitter breakdown voltage of 18V, with a maximum power dissipation of 270W. The minimum DC current gain (hFE) is specified at 10 at 5A, 5V. The MS1003 is suitable for demanding applications in the aerospace, defense, and industrial sectors requiring robust RF performance. It operates efficiently at elevated junction temperatures up to 200°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | M111 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 6dB |
| Power - Max | 270W |
| Current - Collector (Ic) (Max) | 20A |
| Voltage - Collector Emitter Breakdown (Max) | 18V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 5A, 5V |
| Frequency - Transition | 136MHz ~ 175MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | M111 |
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