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MS1001

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MS1001

RF TRANS NPN 18V 30MHZ M174

Manufacturer: Microsemi Corporation

Categories: Bipolar RF Transistors

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Microsemi Corporation's MS1001 is an NPN bipolar RF power transistor designed for high-power RF applications. This chassis-mount component operates with a collector-emitter breakdown voltage of 18V and can handle a continuous collector current of up to 20A. The MS1001 offers a power dissipation capability of 270W and exhibits a minimum DC current gain (hFE) of 20 at 5A collector current and 5V collector-emitter voltage. With a transition frequency of 30MHz and a gain of 13dB, this device is suitable for power amplification stages in demanding RF systems. The MS1001 is manufactured by Microsemi Corporation and is supplied in Bulk packaging, utilizing the M174 package for efficient thermal management. Its robust design makes it applicable in industries such as industrial, medical, and defense electronics.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 32 week(s)Product Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseM174
Mounting TypeChassis Mount
Transistor TypeNPN
Operating Temperature200°C (TJ)
Gain13dB
Power - Max270W
Current - Collector (Ic) (Max)20A
Voltage - Collector Emitter Breakdown (Max)18V
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 5A, 5V
Frequency - Transition30MHz
Noise Figure (dB Typ @ f)-
Supplier Device PackageM174

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