MS1001
RF TRANS NPN 18V 30MHZ M174Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's MS1001 is an NPN bipolar RF power transistor designed for high-power RF applications. This chassis-mount component operates with a collector-emitter breakdown voltage of 18V and can handle a continuous collector current of up to 20A. The MS1001 offers a power dissipation capability of 270W and exhibits a minimum DC current gain (hFE) of 20 at 5A collector current and 5V collector-emitter voltage. With a transition frequency of 30MHz and a gain of 13dB, this device is suitable for power amplification stages in demanding RF systems. The MS1001 is manufactured by Microsemi Corporation and is supplied in Bulk packaging, utilizing the M174 package for efficient thermal management. Its robust design makes it applicable in industries such as industrial, medical, and defense electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | M174 |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 13dB |
| Power - Max | 270W |
| Current - Collector (Ic) (Max) | 20A |
| Voltage - Collector Emitter Breakdown (Max) | 18V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5A, 5V |
| Frequency - Transition | 30MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | M174 |