MRF8372R1
RF TRANS NPN 16V 870MHZ 8SOManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation MRF8372R1 is an NPN bipolar RF transistor designed for high-frequency applications. This component operates at a transition frequency of 870MHz, with a collector current capability of up to 200mA and a collector-emitter breakdown voltage of 16V. It delivers a typical gain of 8dB to 9.5dB and can dissipate up to 2.2W of power. The MRF8372R1 is supplied in an 8-SOIC surface mount package, presented on tape and reel for automated assembly. Its robust performance characteristics make it suitable for use in wireless communication systems and other RF power amplification circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | - |
| Gain | 8dB ~ 9.5dB |
| Power - Max | 2.2W |
| Current - Collector (Ic) (Max) | 200mA |
| Voltage - Collector Emitter Breakdown (Max) | 16V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA, 5V |
| Frequency - Transition | 870MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 8-SOIC |
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