MRF8372GR1
RF TRANS NPN 16V 870MHZ 8SOManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation MRF8372GR1 is an NPN bipolar RF power transistor designed for high-frequency applications. This 8-SOIC packaged component operates at up to 870MHz with a collector current of 200mA and a collector-emitter breakdown voltage of 16V. It delivers a power output of 2.2W and offers a typical gain of 8dB to 9.5dB. The device exhibits a DC current gain (hFE) of at least 30 at 50mA and 5V. Suitable for surface mount configurations, the MRF8372GR1 finds application in various wireless communication systems and RF power amplification circuits within the telecommunications and industrial sectors. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | - |
| Gain | 8dB ~ 9.5dB |
| Power - Max | 2.2W |
| Current - Collector (Ic) (Max) | 200mA |
| Voltage - Collector Emitter Breakdown (Max) | 16V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA, 5V |
| Frequency - Transition | 870MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 8-SOIC |
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