MRF8372G
RF TRANS NPN 16V 870MHZ 8SOManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's MRF8372G is an NPN bipolar RF transistor designed for high-frequency applications. This surface-mount component, housed in an 8-SOIC package, offers a collector current (Ic) of up to 200mA and a collector-emitter breakdown voltage (Vce) of 16V. Featuring a transition frequency of 870MHz and a power dissipation capability of 2.2W, the MRF8372G provides a typical gain of 8dB to 9.5dB. Its DC current gain (hFE) is specified as a minimum of 30 at 50mA and 5V. This device is suitable for use in various RF communication systems and industrial applications requiring robust performance at these frequencies.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | - |
| Gain | 8dB ~ 9.5dB |
| Power - Max | 2.2W |
| Current - Collector (Ic) (Max) | 200mA |
| Voltage - Collector Emitter Breakdown (Max) | 16V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA, 5V |
| Frequency - Transition | 870MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 8-SOIC |
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