MRF8372
RF TRANS NPN 16V 870MHZ 8SOManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation MRF8372 is an NPN bipolar RF transistor designed for high-frequency applications. This component features a collector-emitter breakdown voltage of 16V and a maximum collector current (Ic) of 200mA. Operating at frequencies up to 870MHz, it delivers a typical gain of 8dB to 9.5dB. The MRF8372 is packaged in an 8-SOIC surface-mount configuration, suitable for compact board designs. With a power dissipation of 2.2W, it is utilized in various communication systems, including wireless infrastructure and RF power amplifiers. The DC current gain (hFE) is a minimum of 30 at 50mA collector current and 5V Vce.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | - |
| Gain | 8dB ~ 9.5dB |
| Power - Max | 2.2W |
| Current - Collector (Ic) (Max) | 200mA |
| Voltage - Collector Emitter Breakdown (Max) | 16V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA, 5V |
| Frequency - Transition | 870MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 8-SOIC |
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