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MRF586G

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MRF586G

RF TRANS NPN 17V 3GHZ TO39

Manufacturer: Microsemi Corporation

Categories: Bipolar RF Transistors

Quality Control: Learn More

Microsemi Corporation MRF586G is an NPN bipolar RF transistor. This TO-39 packaged component operates with a collector-emitter breakdown voltage of 17V and a maximum collector current of 200mA. It features a transition frequency of 3GHz and offers a typical gain of 13.5dB. The device is rated for 1W maximum power dissipation and is supplied in Bulk packaging. The MRF586G is suitable for applications in wireless communications infrastructure, radar systems, and electronic warfare.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-205AD, TO-39-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-
Gain13.5dB
Power - Max1W
Current - Collector (Ic) (Max)200mA
Voltage - Collector Emitter Breakdown (Max)17V
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 50mA, 5V
Frequency - Transition3GHz
Noise Figure (dB Typ @ f)-
Supplier Device PackageTO-39

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