MRF586
RF TRANS NPN 17V 3GHZ TO39Manufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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The Microsemi Corporation MRF586 is an NPN bipolar RF transistor designed for high-frequency applications. This through-hole component, housed in a TO-205AD (TO-39) metal can package, operates with a collector-emitter breakdown voltage of 17V and a maximum collector current of 200mA. It exhibits a minimum DC current gain (hFE) of 40 at 50mA and 5V, and a transition frequency of 3GHz. With a power dissipation capability of 1W, the MRF586 delivers a gain of 13.5dB. This device is suitable for use in RF power amplification and signal processing within telecommunications and industrial equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | - |
| Gain | 13.5dB |
| Power - Max | 1W |
| Current - Collector (Ic) (Max) | 200mA |
| Voltage - Collector Emitter Breakdown (Max) | 17V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 50mA, 5V |
| Frequency - Transition | 3GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | TO-39 |
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