MRF581G
RF TRANS NPN 18V 5GHZ MICRO XManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's MRF581G is an NPN bipolar RF transistor designed for high-frequency applications. This component features an 18V collector-emitter breakdown voltage and a maximum collector current of 200mA. With a transition frequency of 5GHz, it offers a typical gain range of 13dB to 15.5dB. The MRF581G exhibits a minimum DC current gain (hFE) of 50 at 50mA and 5V. Its noise figure is rated between 3dB and 3.5dB at 500MHz. The device is packaged in a Micro-X ceramic (84C) for surface mounting and can operate at junction temperatures up to 150°C, with a maximum power dissipation of 1.25W. This transistor finds application in various communication systems and electronic test equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Micro-X ceramic (84C) |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 13dB ~ 15.5dB |
| Power - Max | 1.25W |
| Current - Collector (Ic) (Max) | 200mA |
| Voltage - Collector Emitter Breakdown (Max) | 18V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 50mA, 5V |
| Frequency - Transition | 5GHz |
| Noise Figure (dB Typ @ f) | 3dB ~ 3.5dB @ 500MHz |
| Supplier Device Package | Micro-X ceramic (84C) |
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