MRF581AG
RF TRANS NPN 15V 5GHZ MACRO XManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation MRF581AG is an NPN bipolar RF transistor designed for high-frequency applications. This component features a 15V collector-emitter breakdown voltage and a 200mA maximum collector current. With a transition frequency of 5GHz, it offers a typical gain range of 13dB to 15.5dB. The noise figure is rated from 3dB to 3.5dB at 500MHz. This device is housed in a Macro-X surface mount package, suitable for demanding thermal environments with an operating temperature up to 150°C (TJ). The MRF581AG is commonly utilized in the telecommunications and industrial sectors for RF amplification and switching circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Macro-X |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 13dB ~ 15.5dB |
| Power - Max | 1.25W |
| Current - Collector (Ic) (Max) | 200mA |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 50mA, 5V |
| Frequency - Transition | 5GHz |
| Noise Figure (dB Typ @ f) | 3dB ~ 3.5dB @ 500MHz |
| Supplier Device Package | Macro-X |
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