MRF581A
RF TRANS NPN 15V 5GHZ MICRO XManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation MRF581A is an NPN bipolar RF transistor designed for high-frequency applications. This surface mount component features a 15V collector-emitter breakdown voltage and a maximum collector current of 200mA, with a power dissipation capability of 1.25W. The MRF581A operates effectively up to 5GHz, offering a typical gain range of 13dB to 15.5dB and a noise figure of 3dB to 3.5dB at 500MHz. It exhibits a minimum DC current gain (hFE) of 90 at 50mA and 5V. The transistor is housed in a Micro-X ceramic (84C) package and is supplied in bulk. This component is suitable for use in various RF circuits, including wireless infrastructure and defense applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Micro-X ceramic (84C) |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 13dB ~ 15.5dB |
| Power - Max | 1.25W |
| Current - Collector (Ic) (Max) | 200mA |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 50mA, 5V |
| Frequency - Transition | 5GHz |
| Noise Figure (dB Typ @ f) | 3dB ~ 3.5dB @ 500MHz |
| Supplier Device Package | Micro-X ceramic (84C) |
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