MRF5812G
RF TRANS NPN 15V 5GHZ 8SOManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation MRF5812G is an NPN bipolar RF transistor designed for high-frequency applications. This surface-mount device, packaged in an 8-SOIC, operates with a collector-emitter breakdown voltage of 15V and a maximum collector current of 200mA. It exhibits a transition frequency of 5GHz and delivers a gain typically between 13dB and 15.5dB. The noise figure is rated at 2dB to 3dB at 500MHz. With a maximum power dissipation of 1.25W and a minimum DC current gain (hFE) of 50 at 50mA and 5V, the MRF5812G is suitable for use in wireless communication systems and other RF circuitry.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | - |
| Gain | 13dB ~ 15.5dB |
| Power - Max | 1.25W |
| Current - Collector (Ic) (Max) | 200mA |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 50mA, 5V |
| Frequency - Transition | 5GHz |
| Noise Figure (dB Typ @ f) | 2dB ~ 3dB @ 500MHz |
| Supplier Device Package | 8-SOIC |
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