MRF581
RF TRANS NPN 18V 5GHZ MICRO XManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation MRF581 NPN RF Transistor. This surface-mount device offers a collector-emitter breakdown voltage of 18V and can handle up to 200mA collector current. Featuring a transition frequency of 5GHz and a maximum power dissipation of 1.25W, the MRF581 exhibits a typical gain of 13dB to 15.5dB. Its noise figure is specified as 3dB to 3.5dB at 500MHz. The DC current gain (hFE) is a minimum of 50 at 50mA and 5V. Housed in a Micro-X ceramic (84C) package, this component is suitable for high-frequency applications in the telecommunications and defense industries. Operating temperature range is up to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Micro-X ceramic (84C) |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 13dB ~ 15.5dB |
| Power - Max | 1.25W |
| Current - Collector (Ic) (Max) | 200mA |
| Voltage - Collector Emitter Breakdown (Max) | 18V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 50mA, 5V |
| Frequency - Transition | 5GHz |
| Noise Figure (dB Typ @ f) | 3dB ~ 3.5dB @ 500MHz |
| Supplier Device Package | Micro-X ceramic (84C) |
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