MRF559G
RF TRANS NPN 16V 870MHZ MICRO XManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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The Microsemi Corporation MRF559G is an NPN bipolar RF transistor designed for high-frequency applications. Featuring a 16V collector-emitter breakdown voltage and a maximum collector current of 150mA, this device offers a transition frequency of 870MHz. It provides a typical gain of 9.5dB at 870MHz and a minimum DC current gain (hFE) of 30 at 50mA, 10V. Engineered for demanding performance, the MRF559G dissipates up to 2W and is housed in a Micro-X ceramic (84C) surface-mount package. This component is suitable for use in various communication systems and RF amplification circuits.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Micro-X ceramic (84C) |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | - |
| Gain | 9.5dB |
| Power - Max | 2W |
| Current - Collector (Ic) (Max) | 150mA |
| Voltage - Collector Emitter Breakdown (Max) | 16V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA, 10V |
| Frequency - Transition | 870MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | Micro-X ceramic (84C) |
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