MRF555G
RF TRANS NPN 16V 470MHZManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
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Microsemi Corporation's MRF555G is an NPN bipolar RF transistor designed for high-frequency applications. This component offers a collector current (Ic) of up to 500mA and a collector-emitter breakdown voltage of 16V. It operates at a transition frequency of 470MHz and provides a typical gain of 12.5dB. The MRF555G exhibits a minimum DC current gain (hFE) of 50 at 100mA and 5V. With a power dissipation capability of 3W, this transistor is suitable for use in a variety of RF power amplifier circuits. Its robust construction and performance characteristics make it a valuable component in telecommunications infrastructure and other demanding RF systems. The MRF555G is supplied in Bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Transistor Type | NPN |
| Operating Temperature | - |
| Gain | 12.5dB |
| Power - Max | 3W |
| Current - Collector (Ic) (Max) | 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 16V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 100mA, 5V |
| Frequency - Transition | 470MHz |
| Noise Figure (dB Typ @ f) | - |
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