MRF553G
RF TRNS NPN 16V 175MHZ PWR MACROManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
Quality Control: Learn More
Microsemi Corporation's MRF553G is an NPN bipolar RF transistor designed for high-power applications. This component operates at a collector current of up to 500mA and features a collector-emitter breakdown voltage of 16V. With a transition frequency of 175MHz, the MRF553G delivers a gain typically ranging from 11dB to 13dB. It is packaged in a Power Macro for surface mounting, suitable for high-frequency power amplification in communication systems and industrial equipment. The device offers a maximum power dissipation of 3W and a minimum DC current gain (hFE) of 30 at 250mA and 5V.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Power Macro |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | - |
| Gain | 11dB ~ 13dB |
| Power - Max | 3W |
| Current - Collector (Ic) (Max) | 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 16V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 250mA, 5V |
| Frequency - Transition | 175MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | Power Macro |
Request a Quote
Clients Also Buy
MSC1175M
RF TRANS NPN 65V 1.15GHZ M218
UTV005
RF TRANS NPN 24V 860MHZ 55FT
1014-6A
RF TRANS NPN 50V 1.4GHZ 55LV
