MRF553
RF TRANS NPN 16V 175MHZManufacturer: Microsemi Corporation
Categories: Bipolar RF Transistors
Quality Control: Learn More
Microsemi Corporation MRF553 is an NPN bipolar RF transistor designed for high-frequency applications. This component operates with a collector-emitter breakdown voltage of 16V and a maximum collector current of 500mA. It offers a transition frequency of 175MHz and a power dissipation capability of 3W. The MRF553 exhibits a minimum DC current gain (hFE) of 30 at 250mA and 5V, with a typical power gain of 11.5dB. Supplied in bulk packaging, this transistor is suitable for use in various RF power amplification circuits across telecommunications and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Transistor Type | NPN |
| Operating Temperature | - |
| Gain | 11.5dB |
| Power - Max | 3W |
| Current - Collector (Ic) (Max) | 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 16V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 250mA, 5V |
| Frequency - Transition | 175MHz |
| Noise Figure (dB Typ @ f) | - |
Request a Quote
Clients Also Buy
MSC1175M
RF TRANS NPN 65V 1.15GHZ M218
UTV005
RF TRANS NPN 24V 860MHZ 55FT
MS1701
RF POWER TRANSISTOR
